Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
1,710
In-stock
Vishay Siliconix MOSFET N-CH 150V 100A TO247AC ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 500W (Tc) N-Channel - 150V 100A (Tc) 5.4 mOhm @ 20A, 10V 4V @ 250µA 165nC @ 10V 6250pF @ 75V 7.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,906
In-stock
Vishay Siliconix MOSFET N-CH 150V 100A TO247AC ThunderFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 500W (Tc) N-Channel - 150V 100A (Tc) 5.4 mOhm @ 20A, 10V 4V @ 250µA 165nC @ 10V 6250pF @ 75V 7.5V, 10V ±20V
IRFP3415PBF
RFQ
VIEW
RFQ
3,460
In-stock
Infineon Technologies MOSFET N-CH 150V 43A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 150V 43A (Tc) 42 mOhm @ 22A, 10V 4V @ 250µA 200nC @ 10V 2400pF @ 25V 10V ±20V