Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH1N200P3
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IXYS MOSFET N-CH 2000V 1A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 125W (Tc) N-Channel 2000V 1A (Tc) 40 Ohm @ 500mA, 10V 4V @ 250µA 23.5nC @ 10V 646pF @ 25V 10V ±20V
IXTH3N200P3HV
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IXYS MOSFET N-CH 2000V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 520W (Tc) N-Channel 2000V 3A (Tc) 8 Ohm @ 1.5A, 10V 5V @ 250µA 70nC @ 10V 1860pF @ 25V 10V ±20V