Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTX24N100
RFQ
VIEW
RFQ
3,139
In-stock
IXYS MOSFET N-CH 1000V 24A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 568W (Tc) N-Channel - 1000V 24A (Tc) 400 mOhm @ 12A, 10V 5.5V @ 8mA 267nC @ 10V 8700pF @ 25V 10V ±20V
IXFX180N07
RFQ
VIEW
RFQ
2,709
In-stock
IXYS MOSFET N-CH 70V 180A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 568W (Tc) N-Channel - 70V 180A (Tc) 6 mOhm @ 500mA, 10V 4V @ 8mA 420nC @ 10V 9400pF @ 25V 10V ±20V
IXTH2N170D2
RFQ
VIEW
RFQ
3,608
In-stock
IXYS MOSFET N-CH 1700V 2A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 568W (Tc) N-Channel Depletion Mode 1700V 2A (Tj) 6.5 Ohm @ 1A, 0V - 110nC @ 5V 3650pF @ 10V 0V ±20V