Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH130N20T
RFQ
VIEW
RFQ
1,739
In-stock
IXYS MOSFET N-CH 200V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 200V 130A (Tc) 16 mOhm @ 500mA, 10V 5V @ 1mA 150nC @ 10V 8800pF @ 25V 10V ±20V
IXFX200N10P
RFQ
VIEW
RFQ
775
In-stock
IXYS MOSFET N-CH 100V 200A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V 10V ±20V
IXFX180N15P
RFQ
VIEW
RFQ
2,614
In-stock
IXYS MOSFET N-CH 150V 180A PLUS 247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 150V 180A (Tc) 11 mOhm @ 90A, 10V 5V @ 4mA 240nC @ 10V 7000pF @ 25V 10V ±20V
IXTH16N10D2
RFQ
VIEW
RFQ
1,625
In-stock
IXYS MOSFET N-CH 100V 16A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel Depletion Mode 100V 16A (Tc) 64 mOhm @ 8A, 0V - 225nC @ 5V 5700pF @ 25V 0V ±20V
IXFH70N30Q3
RFQ
VIEW
RFQ
3,622
In-stock
IXYS MOSFET N-CH 300V 70A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel - 300V 70A (Tc) 54 mOhm @ 35A, 10V 6.5V @ 4mA 98nC @ 10V 4735pF @ 25V 10V ±20V