Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH16N50D2
RFQ
VIEW
RFQ
3,283
In-stock
IXYS MOSFET N-CH 500V 16A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 695W (Tc) N-Channel Depletion Mode 500V 16A (Tc) 240 mOhm @ 8A, 0V 199nC @ 5V 5250pF @ 25V 0V ±20V
IXTH10N100D2
RFQ
VIEW
RFQ
1,324
In-stock
IXYS MOSFET N-CH 1000V 10A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 695W (Tc) N-Channel Depletion Mode 1000V 10A (Tc) 1.5 Ohm @ 5A, 10V 200nC @ 5V 5320pF @ 25V 10V ±20V
IXTH16N20D2
RFQ
VIEW
RFQ
3,296
In-stock
IXYS MOSFET N-CH 200V 16A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 695W (Tc) N-Channel Depletion Mode 200V 16A (Tc) 73 mOhm @ 8A, 0V 208nC @ 5V 5500pF @ 25V - ±20V