Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SIHW73N60E-GE3
RFQ
VIEW
RFQ
833
In-stock
Vishay Siliconix MOSFET N-CH 600V 73A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 520W (Tc) N-Channel - 600V 73A (Tc) 39 mOhm @ 36A, 10V 4V @ 250µA 362nC @ 10V 7700pF @ 100V 10V ±20V
IXFX50N50
RFQ
VIEW
RFQ
2,150
In-stock
IXYS MOSFET N-CH 500V 50A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 520W (Tc) N-Channel - 500V 50A (Tc) 100 mOhm @ 25A, 10V 4.5V @ 8mA 330nC @ 10V 9400pF @ 25V 10V ±20V
IXFH140N20X3
RFQ
VIEW
RFQ
2,332
In-stock
IXYS 200V/140A ULTRA JUNCTION X3-CLAS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 520W (Tc) N-Channel - 200V 140A (Tc) 9.6 mOhm @ 70A, 10V 4.5V @ 4mA 127nC @ 10V 7660pF @ 25V 10V ±20V
IRFP4768PBF
RFQ
VIEW
RFQ
1,147
In-stock
Infineon Technologies MOSFET N-CH 250V 93A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 250V 93A (Tc) 17.5 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 10880pF @ 50V 10V ±20V
IXTH2N300P3HV
RFQ
VIEW
RFQ
3,999
In-stock
IXYS MOSFET N-CH 3000V 2A TO247HV - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247HV 520W (Tc) N-Channel - 3000V 2A (Tc) 21 Ohm @ 1A, 10V 5V @ 250µA 73nC @ 10V 1890pF @ 25V 10V ±20V
IXTH3N200P3HV
RFQ
VIEW
RFQ
686
In-stock
IXYS MOSFET N-CH 2000V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 520W (Tc) N-Channel - 2000V 3A (Tc) 8 Ohm @ 1.5A, 10V 5V @ 250µA 70nC @ 10V 1860pF @ 25V 10V ±20V
IXTH80N20L
RFQ
VIEW
RFQ
881
In-stock
IXYS MOSFET N-CH 200V 80A TO-247 Linear™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 520W (Tc) N-Channel - 200V 80A (Tc) 32 mOhm @ 40A, 10V 4V @ 250µA 180nC @ 10V 6160pF @ 25V 10V ±20V
IXFH120N25X3
RFQ
VIEW
RFQ
1,562
In-stock
IXYS MOSFET N-CH 250V 120A TO247 HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 520W (Tc) N-Channel - 250V 120A (Tc) 12 mOhm @ 60A, 10V 4.5V @ 4mA 122nC @ 10V 7870pF @ 25V 10V ±20V
IRFP4468PBF
RFQ
VIEW
RFQ
3,213
In-stock
Infineon Technologies MOSFET N-CH 100V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 100V 195A (Tc) 2.6 mOhm @ 180A, 10V 4V @ 250µA 540nC @ 10V 19860pF @ 50V 10V ±20V
IRFP4368PBF
RFQ
VIEW
RFQ
2,728
In-stock
Infineon Technologies MOSFET N-CH 75V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 75V 195A (Tc) 1.85 mOhm @ 195A, 10V 4V @ 250µA 570nC @ 10V 19230pF @ 50V 10V ±20V