Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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HUF75339G3
RFQ
VIEW
RFQ
2,576
In-stock
ON Semiconductor MOSFET N-CH 55V 75A TO-247 UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 200W (Tc) N-Channel - 55V 75A (Tc) 12 mOhm @ 75A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 10V ±20V
HUFA75339G3
RFQ
VIEW
RFQ
3,659
In-stock
ON Semiconductor MOSFET N-CH 55V 75A TO-247 UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 200W (Tc) N-Channel - 55V 75A (Tc) 12 mOhm @ 75A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 10V ±20V
HUFA75639G3
RFQ
VIEW
RFQ
2,096
In-stock
ON Semiconductor MOSFET N-CH 100V 56A TO-247 UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 200W (Tc) N-Channel - 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 10V ±20V
IXTH3N120
RFQ
VIEW
RFQ
2,191
In-stock
IXYS MOSFET N-CH 1200V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 200W (Tc) N-Channel - 1200V 3A (Tc) 4.5 Ohm @ 500mA, 10V 4.5V @ 250µA 39nC @ 10V 1300pF @ 25V 10V ±20V
IXTH30N25
RFQ
VIEW
RFQ
2,701
In-stock
IXYS MOSFET N-CH 250V 30A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 200W (Tc) N-Channel - 250V 30A (Tc) 75 mOhm @ 15A, 10V 4V @ 250µA 136nC @ 10V 3950pF @ 25V 10V ±20V
HUF75639G3
RFQ
VIEW
RFQ
2,415
In-stock
ON Semiconductor MOSFET N-CH 100V 56A TO-247 UltraFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 200W (Tc) N-Channel - 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 10V ±20V
AUIRFP064N
RFQ
VIEW
RFQ
2,621
In-stock
Infineon Technologies MOSFET N-CH 55V 98A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 55V 110A (Tc) 8 mOhm @ 59A, 10V 4V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V
IRFP3415PBF
RFQ
VIEW
RFQ
3,460
In-stock
Infineon Technologies MOSFET N-CH 150V 43A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 150V 43A (Tc) 42 mOhm @ 22A, 10V 4V @ 250µA 200nC @ 10V 2400pF @ 25V 10V ±20V
IRFP3710PBF
RFQ
VIEW
RFQ
730
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 10V ±20V
IRFP064NPBF
RFQ
VIEW
RFQ
1,106
In-stock
Infineon Technologies MOSFET N-CH 55V 110A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 55V 110A (Tc) 8 mOhm @ 59A, 10V 4V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V