- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,558
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13.4A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 650V | 13.4A (Tc) | 330 mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | 10V | ±20V | |||
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1,990
In-stock
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Infineon Technologies | MOSFET N-CH 650V 15A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 280 mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | 1660pF @ 25V | 10V | ±20V | |||
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VIEW |
2,187
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 11A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 156W (Tc) | N-Channel | - | 800V | 11A (Tc) | 450 mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60nC @ 10V | 1585pF @ 25V | 10V | ±20V | |||
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VIEW |
3,648
In-stock
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | CoolMOS™ CFD7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 650V | 31A (Tc) | 70 mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | 2721pF @ 400V | 10V | ±20V | |||
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2,552
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
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VIEW |
2,537
In-stock
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Infineon Technologies | MOSFET N-CH 800V 11A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 800V | 11A (Tc) | 450 mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | 1600pF @ 100V | 10V | ±20V | |||
