Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH110N25T
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IXYS MOSFET N-CH 250V 110A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 694W (Tc) N-Channel - 250V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 3mA 157nC @ 10V 9400pF @ 25V 10V ±20V
IXTH130N20T
RFQ
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RFQ
1,739
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IXYS MOSFET N-CH 200V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 200V 130A (Tc) 16 mOhm @ 500mA, 10V 5V @ 1mA 150nC @ 10V 8800pF @ 25V 10V ±20V