- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,257
In-stock
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IXYS | MOSFET N-CH 480V 32A TO247AD | HiPerFET™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | 360W (Tc) | N-Channel | - | 480V | 32A (Tc) | 130 mOhm @ 15A, 10V | 4V @ 4mA | 300nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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VIEW |
808
In-stock
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IXYS | MOSFET N-CH 480V 32A TO247AD | HiPerFET™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | 360W (Tc) | N-Channel | - | 480V | 32A (Tc) | 130 mOhm @ 15A, 10V | 4V @ 4mA | 300nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,593
In-stock
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IXYS | MOSFET N-CH 200V 60A TO-247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 200V | 60A (Tc) | 33 mOhm @ 30A, 10V | 4V @ 4mA | 155nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,114
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 46A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 280W (Tc) | N-Channel | - | 200V | 46A (Tc) | 55 mOhm @ 28A, 10V | 4V @ 250µA | 230nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,480
In-stock
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STMicroelectronics | MOSFET N-CH 100V 110A TO-247 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 312W (Tc) | N-Channel | - | 100V | 110A (Tc) | 10.5 mOhm @ 60A, 10V | 4V @ 250µA | 233nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
