Transistors - FETs, MOSFETs - Single Products For Sale - PDF - Discrete Semiconductor Products -

Applied Filters :

4 results

Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
GLOBAL STOCKS
	TK20N60W,S1VF	RFQ VIEW	PDF RFQ	3,188 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-247		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	165W (Tc)	N-Channel	-	600V	20A (Ta)	155 mOhm @ 10A, 10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	10V	±30V
	IXTH460P2	RFQ VIEW	PDF RFQ	2,006 In-stock	IXYS	MOSFET N-CH 500V 24A TO-247		PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	480W (Tc)	N-Channel	-	500V	24A (Tc)	270 mOhm @ 12A, 10V	4.5V @ 250µA	48nC @ 10V	2890pF @ 25V	10V	±30V
	STW22N95K5	RFQ VIEW	PDF RFQ	2,003 In-stock	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-247		Automotive, AEC-Q101, SuperMESH5™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	250W (Tc)	N-Channel	-	950V	17.5A (Tc)	330 mOhm @ 9A, 10V	5V @ 100µA	48nC @ 10V	1550pF @ 100V	10V	±30V
	IXFH6N100Q	RFQ VIEW	PDF RFQ	2,679 In-stock	IXYS	MOSFET N-CH 1000V 6A TO-247AD		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	180W (Tc)	N-Channel	-	1000V	6A (Tc)	1.9 Ohm @ 3A, 10V	4.5V @ 2.5mA	48nC @ 10V	2200pF @ 25V	10V	±20V

1 / 1

＜Prev Next＞