- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,844
In-stock
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IXYS | MOSFET N-CH 175V 150A TO-247 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 880W (Tc) | N-Channel | 175V | 150A (Tc) | 12 mOhm @ 75A, 10V | 4.5V @ 1mA | 233nC @ 10V | 14600pF @ 25V | 10V | ±20V | ||||
VIEW |
1,748
In-stock
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IXYS | MOSFET N-CH 150V 160A TO-247 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 880W (Tc) | N-Channel | 150V | 160A (Tc) | 9 mOhm @ 80A, 10V | 4.5V @ 1mA | 253nC @ 10V | 15000pF @ 25V | 10V | ±20V | ||||
VIEW |
1,302
In-stock
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IXYS | MOSFET N-CH 100V 230A TO-247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 650W (Tc) | N-Channel | 100V | 230A (Tc) | 4.7 mOhm @ 500mA, 10V | 4.5V @ 1mA | 250nC @ 10V | 15300pF @ 25V | 10V | ±20V | ||||
VIEW |
3,038
In-stock
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IXYS | MOSFET N-CH 150V 130A TO-247 | TrenchHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 750W (Tc) | N-Channel | 150V | 130A (Tc) | 12 mOhm @ 65A, 10V | 4.5V @ 1mA | 113nC @ 10V | 9800pF @ 25V | 10V | ±30V | ||||
VIEW |
1,617
In-stock
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IXYS | MOSFET N-CH 200V 102A TO-247 | TrenchHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 750W (Tc) | N-Channel | 200V | 102A (Tc) | 23 mOhm @ 500mA, 10V | 4.5V @ 1mA | 114nC @ 10V | 6800pF @ 25V | 10V | ±30V | ||||
VIEW |
2,451
In-stock
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IXYS | MOSFET N-CH 150V 90A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 455W (Tc) | N-Channel | 150V | 90A (Tc) | 20 mOhm @ 45A, 10V | 4.5V @ 1mA | 80nC @ 10V | 4100pF @ 25V | 10V | ±30V | ||||
VIEW |
1,539
In-stock
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IXYS | MOSFET N-CH 1500V 20A PLUS247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1250W (Tc) | N-Channel | 1500V | 20A (Tc) | 1 Ohm @ 10A, 10V | 4.5V @ 1mA | 215nC @ 10V | 7800pF @ 25V | 10V | ±30V | ||||
VIEW |
2,618
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||||
VIEW |
3,907
In-stock
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IXYS | MOSFET N-CH 250V 110A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 694W (Tc) | N-Channel | 250V | 110A (Tc) | 24 mOhm @ 55A, 10V | 4.5V @ 1mA | 157nC @ 10V | 9400pF @ 25V | 10V | ±20V | ||||
VIEW |
3,294
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 46A TO247 | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 120W (Tc) | N-Channel | 600V | 46A (Tc) | 90 mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | 6000pF @ 25V | 10V | ±30V |