Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFX210N17T
RFQ
VIEW
RFQ
3,250
In-stock
IXYS MOSFET N-CH 170V 210A PLUS247 GigaMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1150W (Tc) N-Channel - 170V 210A (Tc) 7.5 mOhm @ 60A, 10V 5V @ 4mA 285nC @ 10V 18800pF @ 25V 10V ±20V
IRFP3703
RFQ
VIEW
RFQ
3,283
In-stock
Infineon Technologies MOSFET N-CH 30V 210A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 3.8W (Ta), 230W (Tc) N-Channel - 30V 210A (Tc) 2.8 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V
IXTX210P10T
RFQ
VIEW
RFQ
3,327
In-stock
IXYS MOSFET P-CH 100V 210A PLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) P-Channel - 100V 210A (Tc) 7.5 mOhm @ 105A, 10V 4.5V @ 250µA 740nC @ 10V 69500pF @ 25V 10V ±15V
IXFX210N30X3
RFQ
VIEW
RFQ
1,173
In-stock
IXYS 300V/210A ULTRA JUNCTION X3-CLAS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 300V 210A (Tc) 5.5 mOhm @ 105A, 10V 4.5V @ 8mA 375nC @ 10V 24.2nF @ 25V 10V ±20V
IRFP3703PBF
RFQ
VIEW
RFQ
2,837
In-stock
Infineon Technologies MOSFET N-CH 30V 210A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 3.8W (Ta), 230W (Tc) N-Channel - 30V 210A (Tc) 2.8 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V