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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTH3N120	RFQ VIEW	PDF RFQ	2,191 In-stock	IXYS	MOSFET N-CH 1200V 3A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	200W (Tc)	N-Channel	1200V	3A (Tc)	4.5 Ohm @ 500mA, 10V	4.5V @ 250µA	39nC @ 10V	1300pF @ 25V	10V	±20V
	IXTH3N100P	RFQ VIEW	PDF RFQ	2,713 In-stock	IXYS	MOSFET N-CH 1000V 3A TO-247		PolarVHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	125W (Tc)	N-Channel	1000V	3A (Tc)	4.8 Ohm @ 1.5A, 10V	4.5V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±20V
	IXTJ6N150	RFQ VIEW	PDF RFQ	2,632 In-stock	IXYS	MOSFET N-CH 1500V 3A ISOTO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	125W (Tc)	N-Channel	1500V	3A (Tc)	3.85 Ohm @ 3A, 10V	5V @ 250µA	67nC @ 10V	2230pF @ 25V	10V	±30V
	IXTH3N150	RFQ VIEW	PDF RFQ	3,312 In-stock	IXYS	MOSFET N-CH 1500V 3A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	250W (Tc)	N-Channel	1500V	3A (Tc)	7.3 Ohm @ 1.5A, 10V	5V @ 250µA	38.6nC @ 10V	1375pF @ 25V	10V	±30V
	IXTH3N200P3HV	RFQ VIEW	PDF RFQ	686 In-stock	IXYS	MOSFET N-CH 2000V 3A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	520W (Tc)	N-Channel	2000V	3A (Tc)	8 Ohm @ 1.5A, 10V	5V @ 250µA	70nC @ 10V	1860pF @ 25V	10V	±20V

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