Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW9NK90Z
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STMicroelectronics MOSFET N-CH 900V 8A TO-247 SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 160W (Tc) N-Channel 900V 8A (Tc) 1.3 Ohm @ 3.6A, 10V 4.5V @ 100µA 72nC @ 10V 2115pF @ 25V 10V ±30V
STW8N90K5
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STMicroelectronics N-CHANNEL 900 V, 0.60 OHM TYP., MDmesh™ K5 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 130W (Tc) N-Channel 900V 8A (Tc) - 5V @ 100µA - - 10V ±30V