Packaging :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STW50NB20
RFQ
VIEW
RFQ
1,954
In-stock
STMicroelectronics MOSFET N-CH 200V 50A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 280W (Tc) N-Channel - 200V 50A (Tc) 55 mOhm @ 25A, 10V 5V @ 250µA 115nC @ 10V 3400pF @ 25V 10V ±30V
STW34NB20
RFQ
VIEW
RFQ
907
In-stock
STMicroelectronics MOSFET N-CH 200V 34A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 200V 34A (Tc) 75 mOhm @ 17A, 10V 5V @ 250µA 80nC @ 10V 3300pF @ 25V 10V ±30V
STW38NB20
RFQ
VIEW
RFQ
2,212
In-stock
STMicroelectronics MOSFET N-CH 200V 38A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 200V 38A (Tc) 65 mOhm @ 19A, 10V 5V @ 250µA 95nC @ 10V 3800pF @ 25V 10V ±30V
IXTH102N20T
RFQ
VIEW
RFQ
1,617
In-stock
IXYS MOSFET N-CH 200V 102A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel - 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V 10V ±30V
APT20M45BVFRG
RFQ
VIEW
RFQ
3,424
In-stock
Microsemi Corporation MOSFET N-CH 200V 56A TO-247 POWER MOS V® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel - 200V 56A (Tc) 45 mOhm @ 500mA, 10V 4V @ 1mA 195nC @ 10V 4860pF @ 25V 10V ±30V
IXFH88N20Q
RFQ
VIEW
RFQ
3,678
In-stock
IXYS MOSFET N-CH 200V 88A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 500W (Tc) N-Channel - 200V 88A (Tc) 30 mOhm @ 44A, 10V 4V @ 4mA 146nC @ 10V 4150pF @ 25V 10V ±30V
APT20M45BVRG
RFQ
VIEW
RFQ
2,781
In-stock
Microsemi Corporation MOSFET N-CH 200V 56A TO-247 POWER MOS V® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel - 200V 56A (Tc) 45 mOhm @ 500mA, 10V 4V @ 1mA 195nC @ 10V 4860pF @ 25V 10V ±30V
IXFH66N20Q
RFQ
VIEW
RFQ
1,208
In-stock
IXYS MOSFET N-CH 200V 66A TO-247 HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 400W (Tc) N-Channel - 200V 66A (Tc) 40 mOhm @ 33A, 10V 4V @ 4mA 105nC @ 10V 3700pF @ 25V 10V ±30V
APT20M38BVFRG
RFQ
VIEW
RFQ
3,353
In-stock
Microsemi Corporation MOSFET N-CH 200V 67A TO-247 POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 370W (Tc) N-Channel - 200V 67A (Tc) 38 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V 6120pF @ 25V 10V ±30V
IXFX88N20Q
RFQ
VIEW
RFQ
2,954
In-stock
IXYS MOSFET N-CH 200V 88A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 500W (Tc) N-Channel - 200V 88A (Tc) 30 mOhm @ 44A, 10V 4V @ 4mA 146nC @ 10V 4150pF @ 25V 10V ±30V
APT20M38BVRG
RFQ
VIEW
RFQ
2,322
In-stock
Microsemi Corporation MOSFET N-CH 200V 67A TO-247 POWER MOS V® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 370W (Tc) N-Channel - 200V 67A (Tc) 38 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V 6120pF @ 25V 10V ±30V
IRFP4227PBF
RFQ
VIEW
RFQ
1,523
In-stock
Infineon Technologies MOSFET N-CH 200V 65A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 330W (Tc) N-Channel - 200V 65A (Tc) 25 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V
IRFP90N20DPBF
RFQ
VIEW
RFQ
3,501
In-stock
Infineon Technologies MOSFET N-CH 200V 94A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 580W (Tc) N-Channel - 200V 94A (Tc) 23 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 6040pF @ 25V 10V ±30V
IRFP4668PBF
RFQ
VIEW
RFQ
2,368
In-stock
Infineon Technologies MOSFET N-CH 200V 130A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V