- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,461
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 50A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 200V | 50A (Tc) | 40 mOhm @ 25A, 10V | 4V @ 1mA | 183nC @ 10V | 9530pF @ 25V | 10V | ±20V | |||
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VIEW |
3,424
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 56A TO-247 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 200V | 56A (Tc) | 45 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | 4860pF @ 25V | 10V | ±30V | |||
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VIEW |
2,781
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 56A TO-247 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 200V | 56A (Tc) | 45 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | 4860pF @ 25V | 10V | ±30V | |||
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VIEW |
3,353
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 67A TO-247 | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | |||
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VIEW |
2,322
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 67A TO-247 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | |||
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VIEW |
988
In-stock
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IXYS | MOSFET P-CH 200V 90A PLUS247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 890W (Tc) | P-Channel | - | 200V | 90A (Tc) | 44 mOhm @ 22A, 10V | 4V @ 1mA | 205nC @ 10V | 12000pF @ 25V | 10V | ±20V | |||
