Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTR120P20T
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2,173
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IXYS MOSFET P-CH 200V 90A ISOPLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 595W (Tc) P-Channel - 200V 90A (Tc) 32 mOhm @ 60A, 10V 4.5V @ 250µA 740nC @ 10V 73000pF @ 25V 10V ±15V
IXTH60N20L2
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RFQ
3,828
In-stock
IXYS MOSFET N-CH 200V 60A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 540W (Tc) N-Channel - 200V 60A (Tc) 45 mOhm @ 30A, 10V 4.5V @ 250µA 255nC @ 10V 10500pF @ 25V 10V ±20V
IXTX120P20T
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RFQ
1,530
In-stock
IXYS MOSFET P-CH 200V 120A PLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) - Through Hole TO-247-3 PLUS247™-3 - P-Channel - 200V 120A (Tc) 30 mOhm @ 60A, 10V 4.5V @ 250µA 740nC @ 10V 73000pF @ 25V - -
IXTH48P20P
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RFQ
2,359
In-stock
IXYS MOSFET P-CH 200V 48A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 462W (Tc) P-Channel - 200V 48A (Tc) 85 mOhm @ 500mA, 10V 4.5V @ 250µA 103nC @ 10V 5400pF @ 25V 10V ±20V