Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFP250NPBF
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2,799
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Infineon Technologies MOSFET N-CH 200V 30A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 214W (Tc) N-Channel - 200V 30A (Tc) 75 mOhm @ 18A, 10V 4V @ 250µA 123nC @ 10V 2159pF @ 25V 10V ±20V
IRFP260MPBF
RFQ
VIEW
RFQ
3,593
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Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V
IRFP4127PBF
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RFQ
2,428
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Infineon Technologies MOSFET N-CH 200V 75A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 341W (Tc) N-Channel - 200V 75A (Tc) 21 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V
IRFP4227PBF
RFQ
VIEW
RFQ
1,523
In-stock
Infineon Technologies MOSFET N-CH 200V 65A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 330W (Tc) N-Channel - 200V 65A (Tc) 25 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V
IRFP90N20DPBF
RFQ
VIEW
RFQ
3,501
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Infineon Technologies MOSFET N-CH 200V 94A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 580W (Tc) N-Channel - 200V 94A (Tc) 23 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 6040pF @ 25V 10V ±30V
IRFP4668PBF
RFQ
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RFQ
2,368
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Infineon Technologies MOSFET N-CH 200V 130A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V
IRFP260NPBF
RFQ
VIEW
RFQ
2,800
In-stock
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V
IRFP250MPBF
RFQ
VIEW
RFQ
1,160
In-stock
Infineon Technologies MOSFET N-CH 200V 30A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 214W (Tc) N-Channel - 200V 30A (Tc) 75 mOhm @ 18A, 10V 4V @ 250µA 123nC @ 10V 2159pF @ 25V 10V ±20V