- Part Status :
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- Operating Temperature :
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- FET Type :
- FET Feature :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,319
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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VIEW |
2,590
In-stock
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ON Semiconductor | MOSFET N-CH 55V 75A TO-247 | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 270W (Tc) | N-Channel | - | 55V | 75A (Tc) | 9 mOhm @ 75A, 10V | 4V @ 250µA | 205nC @ 20V | 3000pF @ 25V | 10V | ±20V | |||
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VIEW |
3,724
In-stock
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ON Semiconductor | MOSFET N-CH 55V 75A TO-247 | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 55V | 75A (Tc) | 9 mOhm @ 75A, 10V | 4V @ 250µA | 205nC @ 20V | 3000pF @ 25V | 10V | ±20V | |||
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VIEW |
1,824
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 45A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 270W (Tc) | N-Channel | - | 1200V | 40A (Tc) | 100 mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | 20V | +25V, -10V | |||
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VIEW |
1,430
In-stock
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IXYS | MOSFET P-CH 100V 90A ISOPLUS247 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ISOPLUS247™ | 270W (Tc) | P-Channel | - | 100V | 110A (Tc) | 13 mOhm @ 70A, 10V | 4V @ 250µA | 400nC @ 10V | 31400pF @ 25V | 10V | ±15V | |||
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VIEW |
1,552
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 12.5A, 10V | 3.5V @ 1.9mA | 85nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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VIEW |
2,488
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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VIEW |
1,582
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,245
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 74 mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
