Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,668
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Microsemi Corporation MOSFET N-CH 400V 11A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 180W (Tc) N-Channel - 400V 11A (Tc) 650 mOhm @ 5.5A, 10V 4V @ 1mA 55nC @ 10V 950pF @ 25V 10V ±30V
STW34NB20
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907
In-stock
STMicroelectronics MOSFET N-CH 200V 34A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 200V 34A (Tc) 75 mOhm @ 17A, 10V 5V @ 250µA 80nC @ 10V 3300pF @ 25V 10V ±30V
STW38NB20
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2,212
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STMicroelectronics MOSFET N-CH 200V 38A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 200V 38A (Tc) 65 mOhm @ 19A, 10V 5V @ 250µA 95nC @ 10V 3800pF @ 25V 10V ±30V
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2,700
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IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 700V 12A (Tc) 300 mOhm @ 6A, 10V 4.5V @ 250µA 19nC @ 10V 960pF @ 25V 10V ±30V
IRFPC50A
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2,490
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Vishay Siliconix MOSFET N-CH 600V 11A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 600V 11A (Tc) 580 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 2100pF @ 25V 10V ±30V
IXFJ26N50P3
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1,527
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IXYS MOSFET N-CH 500V 14A TO220 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 500V 14A (Tc) 265 mOhm @ 13A, 10V 5V @ 4mA 42nC @ 10V 2220pF @ 25V 10V ±30V
IXTH12N65X2
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2,547
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IXYS MOSFET N-CH 650V 12A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 650V 12A (Tc) 300 mOhm @ 6A, 10V 5V @ 250µA 17nC @ 10V 1100pF @ 25V 10V ±30V
TK25N60X,S1F
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1,527
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 600V 25A (Ta) 125 mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40nC @ 10V 2400pF @ 300V 10V ±30V
IRFPC50APBF
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762
In-stock
Vishay Siliconix MOSFET N-CH 600V 11A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 600V 11A (Tc) 580 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 2100pF @ 25V 10V ±30V
TK25N60X5,S1F
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2,939
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO247 DTMOSIV-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel - 600V 25A (Ta) 140 mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60nC @ 10V 2400pF @ 300V 10V ±30V
SIHG15N60E-GE3
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1,463
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Vishay Siliconix MOSFET N-CH 600V 15A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 180W (Tc) N-Channel - 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 10V ±30V