- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,280
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 555W (Tc) | N-Channel | 1200V | 80A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
2,226
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | 700V | 65A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
1,995
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 175W (Tc) | N-Channel | 1200V | 25A (Tc) | 175 mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
1,687
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
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VIEW |
3,389
In-stock
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Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 65W (Tc) | N-Channel | 1700V | 5A (Tc) | 1.25 Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | 249pF @ 1000V | 20V | +25V, -10V | |||
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VIEW |
2,631
In-stock
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Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 176W (Tc) | N-Channel | 700V | 35A (Tc) | 145 mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | 1035pF @ 700V | 20V | +25V, -10V | |||
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VIEW |
2,985
In-stock
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Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 556W (Tc) | N-Channel | 700V | 110A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | |||
