Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH150N15P
RFQ
VIEW
RFQ
2,809
In-stock
IXYS MOSFET N-CH 150V 150A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 714W (Tc) N-Channel - 150V 150A (Tc) 13 mOhm @ 500mA, 10V 5V @ 4mA 190nC @ 10V 5800pF @ 25V 10V ±20V
IRFP064
RFQ
VIEW
RFQ
1,126
In-stock
Vishay Siliconix MOSFET N-CH 60V 70A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 60V 70A (Tc) 9 mOhm @ 78A, 10V 4V @ 250µA 190nC @ 10V 7400pF @ 25V 10V ±20V
STW150NF55
RFQ
VIEW
RFQ
1,982
In-stock
STMicroelectronics MOSFET N-CH 55V 120A TO-247 STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 55V 120A (Tc) 6 mOhm @ 60A, 10V 4V @ 250µA 190nC @ 10V 4400pF @ 25V 10V ±20V
IRFP064PBF
RFQ
VIEW
RFQ
2,384
In-stock
Vishay Siliconix MOSFET N-CH 60V 70A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 60V 70A (Tc) 9 mOhm @ 78A, 10V 4V @ 250µA 190nC @ 10V 7400pF @ 25V 10V ±20V
IRFP3710PBF
RFQ
VIEW
RFQ
730
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 10V ±20V