Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH280N055T
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2,372
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IXYS MOSFET N-CH 55V 280A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 550W (Tc) N-Channel - 55V 280A (Tc) 3.2 mOhm @ 50A, 10V 4V @ 250µA 200nC @ 10V 9700pF @ 25V 10V ±20V
IXTH250N075T
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RFQ
3,866
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IXYS MOSFET N-CH 75V 250A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 550W (Tc) N-Channel - 75V 250A (Tc) 4 mOhm @ 50A, 10V 4V @ 250µA 200nC @ 10V 9900pF @ 25V 10V ±20V
IXFH270N06T3
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RFQ
3,299
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IXYS 60V/270A TRENCHT3 HIPERFET MOSFE HiperFET™, TrenchT3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 480W (Tc) N-Channel - 60V 270A (Tc) 3.1 mOhm @ 100A, 10V 4V @ 250µA 200nC @ 10V 12600pF @ 25V 10V ±20V
IRFP3415PBF
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RFQ
3,460
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Infineon Technologies MOSFET N-CH 150V 43A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 150V 43A (Tc) 42 mOhm @ 22A, 10V 4V @ 250µA 200nC @ 10V 2400pF @ 25V 10V ±20V