Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH110N15T2
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RFQ
2,779
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IXYS MOSFET N-CH 150V 110A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 480W (Tc) N-Channel - 150V 110A (Tc) 13 mOhm @ 500mA, 10V 4.5V @ 250µA 150nC @ 10V 8600pF @ 25V 10V ±20V
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RFQ
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RFQ
2,673
In-stock
IXYS MOSFET N-CH HiPerFET™, TrenchT2™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 350W (Tc) N-Channel - 150V 76A (Tc) 22 mOhm @ 38A, 10V 4.5V @ 250µA 97nC @ 10V 5800pF @ 25V 10V ±20V
STW240N10F7
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RFQ
3,039
In-stock
STMicroelectronics MOSFET N-CH 100V 180A TO247 STripFET™ F7 Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 300W (Tc) N-Channel - 100V 180A (Tc) 3 mOhm @ 90A, 10V 4.5V @ 250µA 160nC @ 10V 11550pF @ 25V 10V ±20V
IXTH130N10T
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RFQ
950
In-stock
IXYS MOSFET N-CH 100V 130A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 360W (Tc) N-Channel - 100V 130A (Tc) 9.1 mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V 10V ±20V
IXTH180N10T
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RFQ
1,039
In-stock
IXYS MOSFET N-CH 100V 180A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 100V 180A (Tc) 6.4 mOhm @ 25A, 10V 4.5V @ 250µA 151nC @ 10V 6900pF @ 25V 10V ±30V
IXTH160N10T
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RFQ
3,606
In-stock
IXYS MOSFET N-CH 100V 160A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V
IXTH200N10T
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RFQ
3,888
In-stock
IXYS MOSFET N-CH 100V 200A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 550W (Tc) N-Channel - 100V 200A (Tc) 5.5 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 10V ±30V