- Part Status :
- Technology :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,779
In-stock
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IXYS | MOSFET N-CH 150V 110A TO-247 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | 480W (Tc) | N-Channel | - | 150V | 110A (Tc) | 13 mOhm @ 500mA, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,184
In-stock
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IXYS | MOSFET N-CH 100V 110A TO-247 | PolarHT™ HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | 480W (Tc) | N-Channel | - | 100V | 110A (Tc) | 15 mOhm @ 500mA, 10V | 5V @ 4mA | 110nC @ 10V | 3550pF @ 25V | 10V | ±20V | |||
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VIEW |
2,985
In-stock
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Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | 556W (Tc) | N-Channel | - | 700V | 110A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | |||
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VIEW |
2,621
In-stock
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Infineon Technologies | MOSFET N-CH 55V 98A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
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VIEW |
1,106
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
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VIEW |
3,480
In-stock
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STMicroelectronics | MOSFET N-CH 100V 110A TO-247 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 312W (Tc) | N-Channel | - | 100V | 110A (Tc) | 10.5 mOhm @ 60A, 10V | 4V @ 250µA | 233nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
