Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 555W (Tc) N-Channel 1200V 80A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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1,995
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 175W (Tc) N-Channel 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - 20V +25V, -10V
APT40SM120B
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1,687
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Microsemi Corporation MOSFET N-CH 1200V 41A TO247 - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 273W (Tc) N-Channel 1200V 41A (Tc) 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V 2560pF @ 1000V 20V +25V, -10V
GA20SICP12-247
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2,303
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GeneSiC Semiconductor TRANS SJT 1200V 45A TO247 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 45A (Tc) 50 mOhm @ 20A - - 3091pF @ 800V - -