- Part Status :
- Technology :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,226
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 700V | 65A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
2,461
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 50A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 200V | 50A (Tc) | 40 mOhm @ 25A, 10V | 4V @ 1mA | 183nC @ 10V | 9530pF @ 25V | 10V | ±20V | |||
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VIEW |
2,106
In-stock
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NXP USA Inc. | MOSFET N-CH 150V 73A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 150V | 73A (Tc) | 20 mOhm @ 25A, 10V | 4V @ 1mA | 227nC @ 10V | 9537pF @ 25V | 10V | ±20V | |||
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VIEW |
3,993
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 9 mOhm @ 25A, 10V | 4V @ 1mA | 214nC @ 10V | 9000pF @ 25V | 10V | ±20V | |||
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VIEW |
2,423
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.2 mOhm @ 25A, 10V | 2V @ 1mA | 226nC @ 5V | 13000pF @ 25V | 4.5V, 10V | ±15V | |||
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VIEW |
3,382
In-stock
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ON Semiconductor | MOSFET N-CH 500V 15A TO-247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 300W (Tc) | N-Channel | - | 500V | 15A (Tc) | 380 mOhm @ 7.5A, 10V | 4V @ 250µA | 41nC @ 10V | 1850pF @ 25V | 10V | ±30V | |||
|
VIEW |
620
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A TO-247 | STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 150nC @ 10V | 3850pF @ 25V | 10V | ±20V | |||
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VIEW |
3,039
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A TO247 | STripFET™ F7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 300W (Tc) | N-Channel | - | 100V | 180A (Tc) | 3 mOhm @ 90A, 10V | 4.5V @ 250µA | 160nC @ 10V | 11550pF @ 25V | 10V | ±20V | |||
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VIEW |
1,126
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 70A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 60V | 70A (Tc) | 9 mOhm @ 78A, 10V | 4V @ 250µA | 190nC @ 10V | 7400pF @ 25V | 10V | ±20V | |||
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VIEW |
1,982
In-stock
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STMicroelectronics | MOSFET N-CH 55V 120A TO-247 | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 120A (Tc) | 6 mOhm @ 60A, 10V | 4V @ 250µA | 190nC @ 10V | 4400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,593
In-stock
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Infineon Technologies | MOSFET N-CH 200V 50A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 300W (Tc) | N-Channel | - | 200V | 50A (Tc) | 40 mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | 4057pF @ 25V | 10V | ±20V | |||
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VIEW |
1,930
In-stock
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IXYS | MOSFET P-CH 200V 26A TO-247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | P-Channel | - | 200V | 26A (Tc) | 170 mOhm @ 13A, 10V | 4V @ 250µA | 56nC @ 10V | 2740pF @ 25V | 10V | ±20V | |||
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VIEW |
2,384
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 70A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 60V | 70A (Tc) | 9 mOhm @ 78A, 10V | 4V @ 250µA | 190nC @ 10V | 7400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,800
In-stock
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Infineon Technologies | MOSFET N-CH 200V 50A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 300W (Tc) | N-Channel | - | 200V | 50A (Tc) | 40 mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | 4057pF @ 25V | 10V | ±20V | |||
