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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	RFG40N10	RFQ VIEW	PDF RFQ	2,999 In-stock	ON Semiconductor	MOSFET N-CH 100V 40A TO-247		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247	160W (Tc)	N-Channel	-	100V	40A (Tc)	40 mOhm @ 40A, 10V	4V @ 250µA	300nC @ 20V	-	10V	±20V
	IRFP150N	RFQ VIEW	PDF RFQ	1,770 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Obsolete	Bulk	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRFP150NPBF	RFQ VIEW	PDF RFQ	2,839 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRFP150MPBF	RFQ VIEW	PDF RFQ	2,126 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V

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