Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK7A60W,S4VX
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774
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Toshiba Semiconductor and Storage MOSFET N CH 600V 7A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel Super Junction 600V 7A (Ta) 600 mOhm @ 3.5A, 10V 3.7V @ 350µA 15nC @ 10V 490pF @ 300V 10V ±30V
TK1K9A60F,S4X
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1,319
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Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 600V 3.7A (Ta) 1.9 Ohm @ 1.9A, 10V 4V @ 400µA 14nC @ 10V 490pF @ 300V 10V ±30V
TK7A65W,S5X
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3,857
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 6.8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 650V 6.8A (Ta) 780 mOhm @ 3.4A, 10V 3.5V @ 250µA 15nC @ 10V 490pF @ 300V 10V ±30V
TK7A60W5,S5VX
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RFQ
3,434
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 600V 7A (Ta) 650 mOhm @ 3.5A, 10V 4.5V @ 350µA 16nC @ 10V 490pF @ 300V 10V ±30V