- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,979
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 1000V 4A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 42W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 4.2 Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | 1150pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,958
In-stock
|
Sanken | MOSFET N-CH 100V 18A TO-220F | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 100V | 18A (Tc) | 48 mOhm @ 11.9A, 10V | 2.5V @ 350µA | 23nC @ 10V | 1530pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,183
In-stock
|
Infineon Technologies | MOSFET NCH 650V 10.1A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 28W (Tc) | N-Channel | Super Junction | 650V | 10.1A (Tc) | 650 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
1,510
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 7A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 38.5W (Tc) | N-Channel | - | 650V | 7A (Tc) | 1.56 Ohm @ 3.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | 1060pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,651
In-stock
|
Infineon Technologies | MOSFET N-CH 650V TO-220-3 | CoolMOS™ CE | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 28W (Tc) | N-Channel | - | 650V | 7A (Tc) | 650 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
1,826
In-stock
|
Infineon Technologies | MOSFET NCH 800V 3.9A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 31W (Tc) | N-Channel | - | 800V | 3.9A (Tc) | 1.4 Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
2,807
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 8A TO220 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 30W (Tc) | N-Channel | - | 650V | 8A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | |||
|
VIEW |
3,145
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | - | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A TO220SIS | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 60V | 40A (Tc) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
1,200
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 7.3A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 28W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
3,820
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 11.5A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 11.5A (Ta) | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | 10V | ±20V | |||
