- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,963
In-stock
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ON Semiconductor | MOSFET N-CH 800V 17A TO220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 40W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 8.5A, 10V | 4.5V @ 1.7mA | 75nC @ 10V | 3205pF @ 100V | 10V | ±20V | |||
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VIEW |
3,947
In-stock
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Vishay Siliconix | MOSFET N-CHANNEL 800V 15A TO220 | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 35W (Tc) | N-Channel | - | 800V | 15A (Tc) | 290 mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | 2408pF @ 100V | 10V | ±30V | |||
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VIEW |
2,168
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 17A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 17A (Ta) | 290 mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | 2050pF @ 300V | 10V | ±20V |