Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 650V 4.5A TO220FP CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 31W (Tc) N-Channel - 650V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 25nC @ 10V 490pF @ 25V 10V ±20V
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 2.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 650V 2.5A (Ta) 2.51 Ohm @ 1.3A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V