- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,394
In-stock
|
Global Power Technologies Group | MOSFET N-CH 650V 4A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32.8W (Tc) | N-Channel | - | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,857
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,059
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 7A TO220FP | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 650V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 5V @ 250µA | 15nC @ 10V | 690pF @ 100V | 10V | ±25V | |||
