- Operating Temperature :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,971
In-stock
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STMicroelectronics | MOSFET N-CH 650V 20A TO220FP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 20A (Tc) | 180 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 1440pF @ 100V | 10V | ±25V | |||
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1,427
In-stock
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STMicroelectronics | MOSFET N-CH 650V 5.4A | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 5.4A (Tc) | 1.3 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 35nC @ 10V | 880pF @ 50V | 10V | ±30V | |||
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VIEW |
3,984
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 32W (Tc) | N-Channel | - | 650V | 10A (Tc) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
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VIEW |
3,498
In-stock
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ON Semiconductor | MOSFET N-CH 650V 19A TO220F-3 | SuperFET® III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 35W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 35nC @ 10V | 1415pF @ 400V | 10V | ±30V | |||
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VIEW |
939
In-stock
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ON Semiconductor | SUPERFET3 650V TO220F PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 35W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 35nC @ 10V | 1415pF @ 400V | 10V | ±30V | |||
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VIEW |
1,235
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
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VIEW |
2,178
In-stock
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STMicroelectronics | MOSFET N-CH 650V 20A | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 20A (Tc) | 180 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 1440pF @ 100V | 10V | ±25V | |||
