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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	STF13N65M2	RFQ VIEW	PDF RFQ	2,517 In-stock	STMicroelectronics	MOSFET N-CH 650V 10A TO220FP		MDmesh™ M2	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	25W (Tc)	N-Channel	-	650V	10A (Tc)	430 mOhm @ 5A, 10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	10V	±25V
	STFU13N65M2	RFQ VIEW	PDF RFQ	3,483 In-stock	STMicroelectronics	MOSFET N-CH 650V 10A TO-220FP		MDmesh™ M2	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	25W (Tc)	N-Channel	-	650V	10A (Tc)	430 mOhm @ 5A, 10V	4V @ 250µA	17nC @ 10V	590pF @ 100V	10V	±25V
	STF11N65M5	RFQ VIEW	PDF RFQ	3,387 In-stock	STMicroelectronics	MOSFET N CH 650V 9A TO-220FP		MDmesh™ V	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	25W (Tc)	N-Channel	-	650V	9A (Tc)	480 mOhm @ 4.5A, 10V	5V @ 250µA	17nC @ 10V	644pF @ 100V	10V	±25V
	TK13A65U(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,166 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13A TO-220SIS		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	650V	13A (Ta)	380 mOhm @ 6.5A, 10V	5V @ 1mA	17nC @ 10V	950pF @ 10V	10V	±30V

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