Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPAN65R650CEXKSA1
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3,183
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Infineon Technologies MOSFET NCH 650V 10.1A TO220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 28W (Tc) N-Channel Super Junction 650V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V
IPA65R1K5CEXKSA1
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927
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Infineon Technologies MOSFET N-CH 650V TO220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 30W (Tc) N-Channel Super Junction 650V 5.2A (Tc) 1.5 Ohm @ 1A, 10V 3.5V @ 130µA 10.5nC @ 10V 225pF @ 100V 10V ±20V
IPA65R650CEXKSA1
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1,651
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Infineon Technologies MOSFET N-CH 650V TO-220-3 CoolMOS™ CE Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 28W (Tc) N-Channel - 650V 7A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V
IPAW60R360P7SXKSA1
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2,462
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Infineon Technologies MOSFET N-CHANNEL 650V 9A TO220 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 22W (Tc) N-Channel - 650V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±30V