Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK1002DPP-E0#T2
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2,899
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Renesas Electronics America MOSFET N-CH 100V 70A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 100V 70A (Ta) 7.6 mOhm @ 35A, 10V - 94nC @ 10V 6450pF @ 10V 10V ±20V
FQPF45N15V2
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1,075
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ON Semiconductor MOSFET N-CH 150V 45A TO-TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 66W (Tc) N-Channel - 150V 45A (Tc) 40 mOhm @ 22.5A, 10V 4V @ 250µA 94nC @ 10V 3030pF @ 25V 10V ±30V
IPA90R340C3XKSA1
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3,310
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Infineon Technologies MOSFET N-CH 900V 15A TO220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 35W (Tc) N-Channel - 900V 15A (Tc) 340 mOhm @ 9.2A, 10V 3.5V @ 1mA 94nC @ 10V 2400pF @ 100V 10V ±20V
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2,797
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ON Semiconductor MOSFET N-CH 650V 14.9A TO220F - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 650V 14.9A (Tc) 150 mOhm @ 12A, 10V 5V @ 2.4mA 94nC @ 10V 3737pF @ 100V 10V ±20V
IRFI540NPBF
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3,996
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Infineon Technologies MOSFET N-CH 100V 20A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 54W (Tc) N-Channel - 100V 20A (Tc) 52 mOhm @ 11A, 10V 4V @ 250µA 94nC @ 10V 1400pF @ 25V 10V ±20V