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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK4A55DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,573 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 3.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	550V	3.5A (Ta)	2.45 Ohm @ 1.8A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	TK4A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,452 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 4A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	500V	4A (Ta)	2 Ohm @ 2A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	TK3A60DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	621 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	2.5A (Ta)	2.8 Ohm @ 1.3A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	TK5A45DA(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,783 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 4.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	450V	4.5A (Ta)	1.75 Ohm @ 2.3A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	TK3A60DA(Q,M)	RFQ VIEW	PDF RFQ	2,129 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	2.5A (Ta)	2.8 Ohm @ 1.3A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	STF7N65M2	RFQ VIEW	PDF RFQ	3,973 In-stock	STMicroelectronics	MOSFET N-CH 650V 5A TO-220FP		MDmesh™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	20W (Tc)	N-Channel	-	650V	5A (Tc)	1.15 Ohm @ 2.5A, 10V	4V @ 250µA	9nC @ 10V	270pF @ 100V	10V	±25V
	IPA60R600P7XKSA1	RFQ VIEW	PDF RFQ	1,080 In-stock	Infineon Technologies	MOSFET N-CHANNEL 600V 6A TO220		CoolMOS™ P7	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	PG-TO220 Full Pack	21W (Tc)	N-Channel	-	600V	6A (Tc)	600 mOhm @ 1.7A, 10V	4V @ 80µA	9nC @ 10V	363pF @ 400V	10V	±20V
	IPAW60R600P7SXKSA1	RFQ VIEW	PDF RFQ	3,919 In-stock	Infineon Technologies	MOSFET N-CHANNEL 600V 6A TO220		CoolMOS™ P7	Active	-	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	PG-TO220 Full Pack	21W (Tc)	N-Channel	-	600V	6A (Tc)	600 mOhm @ 1.7A, 10V	4V @ 80µA	9nC @ 10V	363pF @ 400V	10V	±20V
	IPA60R600P7SXKSA1	RFQ VIEW	PDF RFQ	3,056 In-stock	Infineon Technologies	MOSFET N-CHANNEL 600V 6A TO220		CoolMOS™ P7	Active	-	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	PG-TO220 Full Pack	21W (Tc)	N-Channel	-	600V	6A (Tc)	600 mOhm @ 1.7A, 10V	4V @ 80µA	9nC @ 10V	363pF @ 400V	10V	±20V
	TK2A65D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,543 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 2A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	650V	2A (Ta)	3.26 Ohm @ 1A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	FDPF3N50NZ	RFQ VIEW	PDF RFQ	2,867 In-stock	ON Semiconductor	MOSFET N-CH 500V 3A TO-220F		UniFET-II™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F	27W (Tc)	N-Channel	-	500V	3A (Tc)	2.5 Ohm @ 1.5A, 10V	5V @ 250µA	9nC @ 10V	280pF @ 25V	10V	±25V

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