- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,219
In-stock
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Infineon Technologies | MOSFET N-CH 60V 58A | StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 83W (Tc) | N-Channel | - | 60V | 58A (Tc) | 9.9 mOhm @ 35A, 10V | 3.7V @ 50µA | 66nC @ 10V | 2170pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,124
In-stock
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V |