Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPD70N04S3-07
RFQ
VIEW
RFQ
660
In-stock
Infineon Technologies MOSFET N-CH 40V 82A TO252-3 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 79W (Tc) N-Channel - 40V 82A (Tc) 6 mOhm @ 70A, 10V 4V @ 50µA 40nC @ 10V 2700pF @ 25V 10V ±20V
IRFR3806TRPBF
RFQ
VIEW
RFQ
2,429
In-stock
Infineon Technologies MOSFET N-CH 60V 43A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 71W (Tc) N-Channel - 60V 43A (Tc) 15.8 mOhm @ 25A, 10V 4V @ 50µA 30nC @ 10V 1150pF @ 50V 10V ±20V
IRFR48ZTRLPBF
RFQ
VIEW
RFQ
944
In-stock
Infineon Technologies MOSFET N-CH 55V 42A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 91W (Tc) N-Channel - 55V 42A (Tc) 11 mOhm @ 37A, 10V 4V @ 50µA 60nC @ 10V 1720pF @ 25V 10V ±20V