Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SJ687-ZK-E1-AY
RFQ
VIEW
RFQ
3,971
In-stock
Renesas Electronics America MOSFET P-CH 20V 20A TO-252 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (MP-3ZK) 1W (Ta), 36W (Tc) P-Channel - 20V 20A (Tc) 7 mOhm @ 10A, 4.5V - 57nC @ 4.5V 4400pF @ 10V 2.5V, 4.5V ±12V
AOD424
RFQ
VIEW
RFQ
2,374
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 20V 18A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 100W (Tc) N-Channel - 20V 18A (Ta), 45A (Tc) 4.4 mOhm @ 20A, 4.5V 1.6V @ 250µA 43nC @ 10V 4630pF @ 10V 2.5V, 4.5V ±12V
IRLR6225TRPBF
RFQ
VIEW
RFQ
1,234
In-stock
Infineon Technologies MOSFET N-CH 20V 100A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 63W (Tc) N-Channel - 20V 100A (Tc) 4 mOhm @ 21A, 4.5V 1.1V @ 50µA 72nC @ 4.5V 3770pF @ 10V 2.5V, 4.5V ±12V