Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SJ687-ZK-E1-AY
RFQ
VIEW
RFQ
3,971
In-stock
Renesas Electronics America MOSFET P-CH 20V 20A TO-252 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (MP-3ZK) 1W (Ta), 36W (Tc) P-Channel 20V 20A (Tc) 7 mOhm @ 10A, 4.5V - 57nC @ 4.5V 4400pF @ 10V 2.5V, 4.5V ±12V
RSD201N10TL
RFQ
VIEW
RFQ
941
In-stock
Rohm Semiconductor MOSFET N-CH 100V 20A CPT3 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 850mW (Ta), 20W (Tc) N-Channel 100V 20A (Tc) 46 mOhm @ 20A, 10V 2.5V @ 1mA 55nC @ 10V 2100pF @ 25V 4V, 10V ±20V