- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,767
In-stock
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Infineon Technologies | MOSFET N-CH 75V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 75V | 42A (Tc) | 26 mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | 10V | ±20V | ||||
VIEW |
1,113
In-stock
|
Rohm Semiconductor | PCH -100V -13A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 20W (Tc) | P-Channel | - | 100V | 13A (Ta) | 200 mOhm @ 6.5A, 10V | 2.5V @ 1mA | 40nC @ 10V | 2400pF @ 25V | 4V, 10V | ±20V | ||||
VIEW |
1,166
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 40A TO252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta), 136W (Tc) | N-Channel | - | 100V | 40A (Tc) | 25 mOhm @ 40A, 10V | 3V @ 250µA | 60nC @ 10V | 2400pF @ 25V | 10V | ±20V |