- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,754
In-stock
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STMicroelectronics | MOSFET P-CH 40V 46A DPAK | STripFET™ F6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 70W (Tc) | P-Channel | - | 40V | 46A (Tc) | 15 mOhm @ 23A, 10V | 2.5V @ 250µA | 34nC @ 4.5V | 3525pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,684
In-stock
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ON Semiconductor | MOSFET N-CH 60V 46A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 71W (Tc) | N-Channel | - | 60V | 46A (Tc) | 16 mOhm @ 20A, 10V | 2V @ 250µA | 29nC @ 10V | 1400pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,962
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 46A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 66W (Tc) | N-Channel | - | 60V | 46A (Tc) | 6.7 mOhm @ 23A, 10V | 2.5V @ 300µA | 26nC @ 10V | 1990pF @ 30V | 4.5V, 10V | ±20V |