- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,703
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
|
VIEW |
1,499
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 40V | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 107W (Tc) | P-Channel | - | 40V | 100A (Tc) | 5.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 280nC @ 10V | 14500pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,963
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 44A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,950
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 55A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
929
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 63A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 107W (Tc) | N-Channel | - | 30V | 63A (Tc) | 12 mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | 2317pF @ 25V | 4.5V, 10V | ±15V | |||
,%20SC-63.jpg)
|
VIEW |
1,896
In-stock
|
Vishay Siliconix | MOSFET N-CH 150V 25A TO252 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 107W (Tc) | N-Channel | - | 150V | 25A (Tc) | 52 mOhm @ 15A, 10V | 4V @ 250µA | 51nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
