- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,500
In-stock
|
Diodes Incorporated | MOSFET P-CH 60V 6.8A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 2.15W (Ta) | P-Channel | - | 60V | 6.8A (Ta) | 55 mOhm @ 3.5A, 10V | 1V @ 250µA | 44nC @ 10V | 1580pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,792
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 16.1A TO-252 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 208.3W (Tc) | N-Channel | - | 650V | 16.1A (Tc) | 250 mOhm @ 4.4A, 10V | 3.5V @ 400µA | 44nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
