- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,207
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 2A TO252 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 44W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.4 Ohm @ 1A, 10V | 4.5V @ 250µA | 9.4nC @ 10V | 249pF @ 25V | 10V | ±30V | |||
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VIEW |
3,199
In-stock
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Infineon Technologies | MOSFET N-CH 600V TO-252-3 | CoolMOS™ CE | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 28W (Tc) | N-Channel | - | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | |||
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VIEW |
2,165
In-stock
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Rohm Semiconductor | NCH 60V 8A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 15W (Tc) | N-Channel | - | 60V | 8A (Ta) | 80 mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | 380pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
1,031
In-stock
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Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 28.4W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | |||
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VIEW |
641
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 650V 5A TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO-252 | 49W (Tc) | N-Channel | - | 650V | 5A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | |||
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VIEW |
1,226
In-stock
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Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | CoolMOS™ C6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 28.4W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V |