- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,651
In-stock
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Infineon Technologies | MOSFET N-CH 30V 65A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,718
In-stock
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Infineon Technologies | MOSFET P-CH 55V 20A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 79W (Tc) | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,950
In-stock
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Infineon Technologies | MOSFET N-CH 30V 55A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
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|
VIEW |
1,513
In-stock
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Infineon Technologies | MOSFET N-CH 30V 23A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 45W (Tc) | N-Channel | - | 30V | 23A (Tc) | 45 mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | 4V, 10V | ±16V | |||
