- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,960
In-stock
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ON Semiconductor | MOSFET P-CH | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK/TP-FA | 1W (Ta), 26W (Tc) | N-Channel | 250V | 3A (Ta) | 2.4 Ohm @ 1.5A, 10V | 4.5V @ 1mA | 4.2nC @ 10V | 210pF @ 20V | 10V | ±30V | |||
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VIEW |
913
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 3A PW-MOLD | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | N-Channel | 250V | 3A (Ta) | 1.7 Ohm @ 1.5A, 10V | 3.5V @ 1mA | 12nC @ 10V | 267pF @ 10V | 10V | ±20V | |||
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VIEW |
2,955
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 3A TO220SM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM | 75W (Tc) | N-Channel | 800V | 3A (Ta) | 3.6 Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | 10V | ±30V | |||
